| FET Type | 2 N-Channel (Dual) |
|---|---|
| FET Feature | Logic Level Gate |
| Power - Max | 350mW |
| Vgs(th) (Max) @ Id | 2.1V @ 250µA |
| Rds On (Max) @ Id, Vgs | 1.6 Ohm @ 500mA, 10V |
| Supplier Device Package | SOT-666 |
| Gate Charge (Qg) (Max) @ Vgs | 0.6nC @ 4.5V |
| Drain to Source Voltage (Vdss) | 60V |
| Input Capacitance (Ciss) (Max) @ Vds | 50pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 340mA |