XinhSemi（xinhansemi.com）由深圳市芯瀚未来电子科技有限公司运营，是面向全球的独立电子元器件分销商。本页列出的 TPCC8002-H-TE12L-Q 由 Toshiba Semiconductor and Storage 生产，属 Transistors - FETs, MOSFETs - Single 类元器件。封装：8-VDFN Exposed Pad。工作温度：150°C (TJ)。生命周期：Obsolete。深圳仓库现货，支持全球直发。需要批量报价或确认交期，请使用页面右侧"加入询价单"，销售将在 1 个工作日内联系您。— xinhansemi.com
| FET Type | N-Channel |
|---|---|
| Vgs (Max) | - |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Rds On (Max) @ Id, Vgs | 8.3 mOhm @ 11A, 10V |
| Power Dissipation (Max) | 700mW (Ta), 30W (Tc) |
| Supplier Device Package | 8-TSON |
| Gate Charge (Qg) (Max) @ Vgs | 27nC @ 10V |
| Drain to Source Voltage (Vdss) | 30V |
| Input Capacitance (Ciss) (Max) @ Vds | 2500pF @ 10V |
| Drive Voltage (Max Rds On,Min Rds On) | - |
| Current - Continuous Drain (Id) @ 25°C |
| 22A (Ta) |